GeneSiC's 3rd Generation (G3R™) 750V SiC MOSFETs Offer Unparalleled Performance and Reliability 1
Dulles, VA, June 7, 2021 — GeneSiC Semiconductor’s next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC’s G3R™, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.
“High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry’s best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition.” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.
G3R60MT07J – 750V 60mΩ G3R™ TO-263-7 SiC MOSFET
G3R60MT07D – 750V 60mΩ G3R™ TO-247-3 SiC MOSFET
G3R60MT07K – 750V 60mΩ G3R™ TO-247-4 SIC MOSFET
Features:
– Industry’s lowest gate charge (QG) and internal gate resistance (RG(INT) )
– Lowest RDS(ON) change with temperature
– Low output capacitance (COSS ) and miler capacitance (CGD )
– 100% avalanche (UIL) tested during production
– Industry-leading short circuit withstand capability
– Fast and reliable body diode with low VF and low QRR
– High and stable gate threshold voltage (VTH ) across all temperature and drain-bias conditions
– Advanced packaging technology for lower thermal resistance and lower ringing
– Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
– Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing
Applications:
– Solar (PV) Inverters
– EV / HEV Onboard Chargers
– Server & Telecom Power Supplies
– Uninterruptible Power Supplies (UPS)
– DC-DC Converters
– Switched Mode Power Supplies (SMPS)
– Energy Storage and Battery Charging
– Induction Heating 
All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.
For datasheet and other resources, visit – https://www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com
All devices are available from authorized distributors – https://www.genesicsemi.com/sales-support/
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